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| Photodiode-Chip 16.05.2008 Wavelength range Infrared 3350 20 O3000 EPC-1300-3.0-3 rev. 03 Electrodes Both on top side Type Planar Technology InGaAs/InP typ. dimensions in m typ. thickness 330 (20) m top side* Description Broadband photodiode with maximum response in the NIR-region, no rear side metalization 3350 20 bond gold 1.0 m rear side no metalization * Bond pad assigment: Pos. 1 - Anode Pos. 2 - Cathode O200 O150 Applications Optical communications, safety equipment, light barriers Miscellaneous Parameters Tamb = 25 unless otherwise specified C, Parameter Active area Operating temperature range Storage temperature range Temperature coefficient of ID T = -40...120 C Test onditions Symbol A Tamb Tstg TC(ID) Value 7.0 -40 to +125 -40 to +125 7.4 Unit mm C C %/K Optical and Electrical Characteristics Tamb = 25 unless otherwise specified C, Test Parameter conditions IF = 10 mA Forward voltage Breakdown voltage2) Sensitivity range at 10 % Spectral bandwidth at 50 % Responsivity at 1300 nm Dark current Shunt resistance Noise equivalent power Specific detectivity Junction capacitance 1) 1) Symbol VF VR 0,5 S ID RSH NEP D* CJ Min Typ 0.6 Max Unit V V IR = 10 A VR = 0 V VR = 0 V VR = 0 V VR = 5 V VR = 10 mV = 1300 nm = 1300 nm VR = 0 V 5 800 680 0.9 5 15 30 5.2x10 -14 1750 nm nm A/W 30 nA M W/ Hz cm Hz W -1 5.1x1012 1000 1300 pF measured on bare chip on TO-18 header 2) for information only Labeling Type EP-1300-3.0-3 Typ. ID [nA] Typ. S[A/W] Lot N Quantity Packing: Chips on adhesive film with wire-bond side on top *Note: All measurements carried out with EPIGAP equipment We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 1 of 2 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 Photodiode-Chip 16.05.2008 EPC-1300-3.0-3 rev. 03 T y p ic a l O p tic a l R e s p o n s iv ity 1 ,0 0 ,8 Responsivity (A/W) 0 ,6 0 ,4 0 ,2 0 ,0 400 600 800 1000 1200 1400 1600 1800 W a v e le n g th [n m ] D a rk C u rre n t v s . A m b ie n t T e m p e ra tu re 100 Dark Current [nA] T K = 0 .7 4 % /K 10 1 20 40 60 80 100 120 A m b ie n t T e m p e ra tu re [C ] S h o rt-C irc u it C u rre n t v s . A m b ie n t T e m p e ra tu re [T C ] Short-Circuit Current [arb. units] 1 ,0 4 1 ,0 2 1 ,0 0 0 ,9 8 0 ,9 6 0 ,9 4 0 ,9 2 0 ,9 0 T C (I S H ) = -0 .3 7 % /K 0 20 40 60 80 100 120 140 A m b ie n t T e m p e ra tu re [C ] We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each application by the customers themselves. EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 2 of 2 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 |
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